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features ? frequency range 2.4 ghz to 2.5 ghz supply voltage 2.7v to 3.6v 32 db power gain 23 dbm linear output power fo r ieee 802.11b mode operation evm < 2.0% at 19 dbm output po wer for ieee 802.11g mode operation on-chip power detector with 20 db dynamic range power-down mode and biasing control input and interstage matching fully on-chip low profile lead-free plastic package qfn16 (3 3 0.9 mm) applications ieee 802.11b dsss wlan ieee 802.11g ofdm wlan pc cards, pcmcia, access points 2.4 ghz ism band application 1. description this power amplifier (pa) is designed for high-performance 802.11b and 802.11g multi-mode applications such as mini pci and pcmcia for portable devices and access points. the low profile plastic package with internal input matching to 50 ? and on-chip interstage matching minimizes the pcb board-space and allows simplified integration with very few passive component s. the on-chip power detector provides a voltage linear to the output power, while the standby/bias control logic provides power-saving and shutdown options. the pa is realized as a three stage pa with internal interstage matching and an open-collector output structure. the power amplifier is designed using at mel?s silicon-germani um (sige2) process and provides excellent linearity and noise performance, high gain, and good power- added efficiency. high gain power amplifier for 802.11b/g wlan systems atr7032 preliminary rev. 4846b?wlan?04/05
2 4846b?wlan?04/05 atr7032 [preliminary] figure 1-1. block diagram rf_in ic gnd_rf v_pa1 15 14 13 10 9 16 8 interstage matching 50 ? input match voltage detector standby/ bias circuitry 11 rf_out rf_out rf_out rf_out 12 5 6 7 interstage matching 1 2 3 4 paddle gnd_rf ic v_pa2 nc nc atr7032 vctrl vcc gnd_vcc vdet
3 4846b?wlan?04/05 atr7032 [preliminary] 2. pin configuration figure 2-1. pinning qfn16 ic v_pa2 nc nc ic rf_in gnd v_pa1 rf_out rf_out rf_out rf_out 16 15 14 13 5 6 7 8 1 2 3 4 12 11 10 9 atr7032 vctrl vcc gnd_vcc vdet table 2-1. pin description pin symbol function 1 vctrl power-up/biasing control voltage 2 vcc supply voltage 3 gnd_vcc ground 4 vdet power detector voltage 5 rf_out rf output 6 rf_out rf output 7 rf_out rf output 8 rf_out rf output 9 nc not connected 10 nc not connected 11 v_pa2 supply voltage pa stage 2 12 ic internally connected, on-chip matc hing; must not be externally connected 13 v_pa1 supply voltage pa stage 1 14 gnd ground 15 rf_in rf input 16 ic internally connected, on-chip matc hing; must not be externally connected slug ? ground
4 4846b?wlan?04/05 atr7032 [preliminary] 3. absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions beyond t hose indicated in the operational sections of this specification is not implied. exposure to absolute maximum rati ng conditions for extended periods may affect device reliability . parameters test conditions symbol value unit supply voltage v cc tbd v supply current i cc 600 ma junction temperature t j 150 c storage temperature t stg ?40 to +125 c input rf power p in 12 dbm control voltage power up/down and biasing v contr 0 to +3.0 v esd protection, all pins eia/jesd22-a114-b v esd 500 v note: 1. the part may not survive all maximums applied simultaneously. 4. operating range parameters symbol value unit supply voltage range v cc 2.7 to 3.6 v ambient temperature range t amb ?40 to +85 c frequency range f 2400 to 2500 mhz 5. electrical characteristics test conditions measured on atmel?s eval uation board (unless otherwise stated): v cc = 3.3v, frequency = 2.45 ghz, t amb = 25c no. parameters test conditions pin symbol min. typ. max. unit type* 1.0 control voltage range pa operating mode v contr 12va 1.1 power down mode v contr 0.2 a 1.2 current consumption quiescent i cq 90 ma a 1.3 power down mode i pd 10 a a *) type means: a = 100% tested, b = 100% correlation test ed, c = characterized on samples, d = design parameter
5 4846b?wlan?04/05 atr7032 [preliminary] 6. electrical characteristics ? unmodulated carrier test conditions measured on atmel?s eval uation board (unless otherwise stated): v cc = 3.3v, frequency = 2.45 ghz, t amb = 25c no. parameters test conditions pi n symbol min. typ. max. unit type* 2.0 saturated output power for reference p sat 28.5 dbm a 2.1 p1db output power p1db 27 dbm a 2.2 harmonic rejection p out = 23 dbm 2fout 3fout ?45 ?30 dbc dbc c c 2.3 small signal gain i cq , small signal condition gl 32 db a 2.4 gain variation i cq , small signal condition 2.4 to 2.5 ghz ?40 to +85c g varfreq g vartemp ?1 ?1.5 +1 +1.5 db db a c 2.5 reverse isolation i cq , small signal condition isor 40 db c 2.6 input 50 ? vswr i cq , small signal condition vswr in 2:1 c 2.7 output 50 ? vswr i cq , small signal condition, with external matching vswr out 2:1 c *) type means: a = 100% tested, b = 100% correlation tested, c = characterized on samples, d = design parameter 7. electrical characteristics ? 11 mbps cck modulation test conditions measured on atmel?s eval uation board (unless otherwise stated): v cc = 3.3v, frequency = 2.45 ghz, t amb = 25c, 11 mbps cck modulation with gaussian transmit filtering of bt = 0.4, confor ming to ieee 802.11b no. parameters test conditions pin symbol min. typ. max. unit type* 3.0 maximum linear output power acpr1 33 dbc, acpr2 55 dbc p lin 23 dbm a 3.1 linear power gain p out = p lin , acpr1 33 dbc, acpr2 55 dbc gl 32 db a 3.2 current consumption p out = p lin , acpr1 33 dbc, acpr2 55 dbc i cc 220 ma a *) type means: a = 100% tested, b = 100% correlation test ed, c = characterized on samples, d = design parameter 8. electrical characteristics ? 54 mbps ofdm modulation test conditions measured on atmel?s eval uation board (unless otherwise stated): v cc = 3.3v, frequency = 2.45 ghz, t amb = 25c, 54 mbps ofdm modulation, conforming to ieee 802.11g; 0.7% evm measurement equipment noise floor is included in the evm measurement result. no. parameters test conditions pin symbol min. typ. max. unit type* 4.0 error vector magnitude p out = 19 dbm evm 2.0 % a 4.1 linear power gain p out = 19 dbm gl 32 db a 4.2 current consumption p out = 19 dbm i cc 150 ma a *) type means: a = 100% tested, b = 100% correlation test ed, c = characterized on samples, d = design parameter
6 4846b?wlan?04/05 atr7032 [preliminary] 10. application circuit figure 10-1. application board schematic 9. power detector test conditions measured on atmel?s eval uation board (unless otherwise stated): v cc = 3.3v, frequency = 2.45 ghz, t amb = 25c no. parameters test conditions pin symbol min. typ. max. unit type* 5.0 detector voltage range p out = 5 to 25 dbm v det 02va 5.1 settling time p out = 5 to 25 dbm t set 0.5 s c 5.2 detector accuracy p out = 5 to 25 dbm v cc = 2.7 to 3.6v t amb = ?40 to +85c ? p out 0.7 db c *) type means: a = 100% tested, b = 100% correlation test ed, c = characterized on samples, d = design parameter c10 (1) vctrl c9 (1) c5 t2 c7 l3 v_pa3 vdet pa_out v_pa1 c1 rf_in c2 vcc l1 c3 t1 ic gnd_rf 15 14 13 10 9 16 atr7032 nc 8 nc interstage matching 50 ? input match voltage detector standby/ bias circuitry ic 11 12 5 6 7 interstage matching 1 2 3 4 paddle gnd_rf v_pa2 c8 r1 (1) c12 (1) c11 (1) l2 c19 c18 (1) c17 (1) c16 (1) c4 t1, t2: microstrip line microstrip line length/mm width/mm t1 4.3 0.64 t2 5.6 0.64 metal layer distance to ground: 360 m cu metal layer thickness: 35 m r of dielectric material (fr4): 4.5 (1) components can be omitted depending on application ic: internally connected; pin must not be connected to any other pin or supply chain
7 4846b?wlan?04/05 atr7032 [preliminary] figure 10-2. application board layout table 10-1. bill of materials for application board component reference value size capacitor c 1 4p7 0603 capacitor c 2 56p 0603 capacitor c 3 56p 0603 capacitor c 4 56p 0603 capacitor c 5 1p8 0603 capacitor c 7 4p7 0603 capacitor c 8 4p7 0603 capacitor c 9 4p7 0603 capacitor c 10 (1) 10n 0603 capacitor c 11 (1) 10n 0603 capacitor c 12 (1) 10n 0603 capacitor c 16 (1) 1 0603 capacitor c 17 (1) 1 0603 capacitor c 18 (1) 1 0603 capacitor c 19 (1) 1 0603 resistor r 1 22k 0603 inductor l 1 15n 0603 inductor l 2 15n 0603 inductor l 3 15n 0603 note: 1. components can be omitted depending on application
8 4846b?wlan?04/05 atr7032 [preliminary] 10.1 evaluation board set-up instructions after connection of all cables (rf and dc): v cc , v v_pa1 , v v_pa2 , v rf_out = 3.3v increase vctrl until 90 ma quiscent current without rf signal is reached (~ 1.05v) incease input power until desired linear output power is reached 11. typical operating characteristics figure 11-1. typical gain and current versus control voltage: frequency = 2450 mhz; p in = ?40 dbm; v v_pa1 = v v_pa2 = v rf_out = v cc = 3.3v figure 11-2. typical operating point for 54 mbps ofdm modulation: frequency = 2450 mhz; p out = 19 dbm; v v_pa1 = v v_pa2 = v rf_out = v cc = 3.3v -30 -20 -10 0 10 20 30 40 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v ctrl (v) 0 50 100 150 200 250 300 350 i (ma) gain gain (db) i tot i v_pa3 i v_pa2 i v_pa1 + i vcc 0 0.5 1 1.5 2 2.5 3 3.5 0.9 0.95 1 1.05 1.1 1.15 1.2 evm (%) 110 120 130 140 150 160 170 180 i (ma) evm i operating point i tot v ctrl (v)
9 4846b?wlan?04/05 atr7032 [preliminary] figure 11-3. typical s-parameter at operating point: v ctrl = 1.05v; i cq = 90 ma; v v_pa1 = v v_pa2 = v rf_out = v cc = 3.3v figure 11-4. typical s-parameter at operating point (detail): v ctrl = 1.05v; i cq = 90 ma; v v_pa1 = v v_pa2 = v rf_out = v cc = 3.3v -40 -30 -20 -10 0 10 20 30 40 0.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 f (ghz) s21 (db) -70 -60 -50 -40 -30 -20 -10 0 10 s12, s11 and s22 (db) s 12 s 21 s 11 s 22 0.5 -40 -30 -20 -10 0 10 20 30 40 2.40 2.43 2.45 2.48 2.50 f (ghz) s21 (db) -70 -60 -50 -40 -30 -20 -10 0 10 s12, s11 and s22 (db) s 21 s 11 s 22 s 12
10 4846b?wlan?04/05 atr7032 [preliminary] figure 11-5. typical power-sweep with unmodulated carrier at operating point: frequency = 2450 mhz; v ctrl = 1.05v; i cq = 90 ma; v v_pa1 = v v_pa2 = v rf_out = v cc = 3.3v figure 11-6. typical power-sweep with unmodulated carrier at operating point (temperature behaviour): frequency = 2450 mhz; v ctrl = 1.05v; i cq = 90 ma; v v_pa1 = v v_pa2 = v rf_out = v cc = 3.3v 0 5 10 15 20 25 30 35 40 45 50 3 5 7 9 11 13 15 17 19 21 23 25 27 29 p out (dbm) gain (db) and pae (%) 0 50 100 150 200 250 300 350 400 450 500 i (ma) pae gain i tot i v_pa3 i v_pa2 i v_pa1 + i vcc 20 22 24 26 28 30 32 34 36 38 40 3 5 7 9 11 13 15 17 19 21 23 25 27 29 p out (dbm) gain (db) and pae (%) 50 100 150 200 250 300 350 400 450 500 550 i (ma) gain (+85c) gain (+25c) gain (-40c) i tot (+85c) i tot (+25c) i tot (-40c)
11 4846b?wlan?04/05 atr7032 [preliminary] figure 11-7. typical spectral plot conforming compliance to 802.11b spectral mask for 11 mbps cck modulation at operating point: p out = 23 dbm; frequency = 2450 mhz; v ctrl = 1.05v; i cc = 220 ma; v v_pa1 = v v_pa2 = v rf_out = v cc = 3.3v figure 11-8. typical power-sweep with 54 mbps ofdm modulation at operating point: frequency = 2450 mhz; v ctrl = 1.05v; i cq = 90 ma; v v_pa1 = v v_pa2 = v rf_out = v cc = 3.3v span 100 mhz 10 mhz/ center 2.45 ghz -70 a trg lvl ext 55 dbc 33 dbc line acprbu_g marg limit check marg 22.79 dbm ch pwr * rbw 100 khz * vbw 100 khz * swt 20 ms * at t 0 db ref 21.1 dbm 1 rm * avg offset 20.8 db 20 10 0 -10 -20 -30 -40 -50 -60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 15 16 17 18 19 20 21 p out (dbm) evm (%) 100 110 120 130 140 150 160 170 180 i (ma) evm i tot
12 4846b?wlan?04/05 atr7032 [preliminary] figure 11-9. typical spectral plot conforming compliance to 802.11g spectral mask for 54 mbps ofdm modulation at operating point: p out = 23 dbm; frequency = 2450 mhz; v ctrl = 1.05v; i cc = 150 ma; v v_pa1 = v v_pa2 = v rf_out = v cc = 3.3v figure 11-10. typical detector voltage versus p out for unmodulated carrier (temperature and vcc parameterized): frequency = 2450 mhz; v ctrl = 1.05 v; i cq = 90 ma; v v_pa1 = v v_pa2 = v rf_out = v cc = 2.7v, 3.3v, 3.6v; t amb = ?40c, 25c, 85c * rbw 100 khz * vbw 100 khz * swt 20 ms * at t 5 db ref 13.1 dbm offset 20.8 db 10 1 rm * avg 0 -10 -20 -30 -40 -50 -60 -70 -80 18.98 dbm ch pwr a trg lvl ext gat span 100 mhz 10 mhz/ center 2.45 ghz 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -5 -1 3 7 11 15 19 23 27 p out (dbm) voltage (v) v det
13 4846b?wlan?04/05 atr7032 [preliminary] figure 11-11. power detector response (rising edge): p out = 23 dbm; frequency = 2450 mhz; v ctrl = 1.05v; i cq = 90 ma; v v_pa1 = v v_pa2 = v rf_out = v cc = 3.3v figure 11-12. power detector response (falling edge): p out = 23 dbm; frequency = 2450 mhz; v ctrl = 1.05v; i cq = 90 ma; v v_pa1 = v v_pa2 = v rf_out = v cc = 3.3v
14 4846b?wlan?04/05 atr7032 [preliminary] 13. package information 12. ordering information extended type number package remarks moq ATR7032-PVPW qfn16, 3 3 taped and 80 mm reeled, rohs compliant 6000 pcs. atr7032-pvqw qfn16, 3 3 taped and 330 mm reeled, rohs compliant 1500 pcs. atr7032-dev-board ? evaluation board 1 1 4 16 0.25 3 1.7 16 13 12 1 5 8 0.4 0.1 0.9 0.1 0.05 0.5 nom. 1.5 +0 -0.05 2.68 0.15 specifications according to din technical drawings not indicated tolerances 0.05 dimensions in mm package: qfn 16 - 3x3 exposed pad 1.7x1.7 (acc. jedec outline no. mo-220) drawing-no.: 6.543-5115.01-4 issue: 1; 07.03.05 assembly chip pac 94
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